Measurement and tuning of the chromatic dispersion of a silicon photonic wire around the half band gap spectral region

We demonstrate the measurement and tuning of second-to-fourth order dispersion of a silicon wire waveguide in a spectral region of low nonlinear losses. Using white light interferometry we extract the chromatic dispersion of our waveguide from 1950 to 2300 nm. Moreover we demonstrate tuning of the zero dispersion wavelength over more than 100 nm, pushing it to longer wavelength by partially underetching the waveguide. © 2014 Optical Society of America.info:eu-repo/semantics/publishe

Tunable 4-channel ultra-dense WDM demultiplexer with III-V photodiodes integrated in silicon-on-insulator

A tunable 4-channel ultra-dense WDM demultiplexer with 0.25nm channel spacing is demonstrated with III-V photodiodes integrated on Silicon-on-Insulator using rib waveguides. A possible application is an in-band label extractor for all-optical packet switching

Narrow line width frequency comb source based on an injection-locked III–V-on-silicon mode-locked laser

In this paper, we report the optical injection locking of an L-band (similar to 1580 nm) 4.7 GHz III-V-on-silicon mode-locked laser with a narrow line width continuous wave (CW) source. This technique allows us to reduce the MHz optical line width of the mode-locked laser longitudinal modes down to the line width of the source used for injection locking, 50 kHz. We show that more than 50 laser lines generated by the mode-locked laser are coherent with the narrow line width CW source. Two locking techniques are explored. In a first approach a hybrid mode-locked laser is injection-locked with a CW source. In a second approach, light from a modulated CW source is injected in a passively mode-locked laser cavity. The realization of such a frequency comb on a chip enables transceivers for high spectral efficiency optical communication. (C) 2016 Optical Society of Americ

Optical isolator for TE polarized light realized by adhesive bonding of Ce:YIG on silicon-on-insulator waveguide circuits

An optical isolator for transverse electric (TE) polarized light is demonstrated by adhesive bonding of a ferrimagnetic garnet die on top of a 380 nm thick silicon waveguide circuit. Polarization rotators are implemented in the arms of a nonreciprocal Mach-Zehnder interferometer to rotate the polarization to transverse magnetic in the nonreciprocal phase shifter regions. Calculation of the nonreciprocal phase shift (NRPS) as a function of bonding layer thickness experienced by the TM mode in the interferometer arms is presented, together with the simulation of the robustness of the polarization rotator. Experimentally, 32 dB isolation is measured at 1540.5 nm wavelength using a magnetic field transverse to the light propagation directions. This paves the way to the cointegration of laser diodes and optical isolators on a silicon photonics platform

Hybrid silicon lasers for optical interconnect

Hybrid III-V/silicon lasers for short reach optical interconnect applications need to have a modest power dissipation and preferably also a small footprint. Furthermore they should be free of mode hops even under varying temperature conditions. In this paper a number of designs will be discussed that address this set of requirements